Nanobaguettes single epitaxial graphene layers on SiC(11-20)

摘要

In this paper we investigate the growth of epitaxial graphene on the (11-20) plane. The growth was done in a RF furnace in secondary vacuum condition, by implementing our technique of covering the SiC substrate with a graphitic cup during the growth. The grown material was structurally investigated by means of AFM and SEM, and the quality assessed by Raman spectroscopy. Finally the degradation induced by the device processing on graphene quality is discussed.