Simulation of Substrate Temperature Distribution in Diamond Films Growth on Silicon Wafer by Hot Filament CVD

摘要

The substrate temperature has great influence on the growth rate and quality of diamond films by hot filament chemical vapor deposition (HFCVD). In order to deposit polycrystalline diamond films of uniform thickness over large areas and improve the growth rate of diamond films, the substrate temperature uniformity need to be further improved. Thus three-dimensional finite volume simulation has been developed to predict substrate temperature distribution, and optimize the deposition parameters like the size and arrangement of filaments which have a profound effect on the substrate temperature. Based on the simulation results, the optimum parameters of diamond deposition are found. Subsequently, experiments of depositing diamond films on silicon (100) wafers are done when the deposition parameters are fixed at optimum values gained from the simulation results. According to the results of scanning electron microscopy (SEM) and Raman spectroscopy, the thickness and quality of diamond films are homogeneous, which validate that the simulated deposition parameters are conducive to fabricate the high quality diamond films.