Influence of P~+-implantation and post-annealing on warpage structure of 4H-SiC wafers

摘要

We examined the warpage structure in epitaxial 4H-SiC wafers subjected to phosphorus-ion (P~+) implantation and post-annealing with varying implantation and annealing temperatures, using glazing-incidence monochromatic synchrotron X-ray topography. Using Raman spectroscopy, we then studied the relationship between the warpage of the crystal plane in the underlying epilayer and the recovery of lattice disorder in the implanted layer. We determined that the warpage structure of the underlying SiC epilayer was closely correlated with the recovery of lattice disorder in the implanted layer.