Analysis of Forward Surge Performance of SiC Schottky Diodes

摘要

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.