Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model

摘要

In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, I_C-V_(GE), forward characteristics, I_C-V_(CE), and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from V_F = 4.2-10.0 V at I_C=20A, using a charge carrier lifetime of τ_A=20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.