Formation of Si nanocrystals in LP CVD semi-insulating polycrystalline silicon films

摘要

Influence of oxygen on silicon nanocrystals formation peculiarities and size in semi-insulating polycrystalline silicon thin films has been demonstrated by the means of local atomic surrounding sensitive electronic structure experimental studies. Low-pressure chemical deposition from the gas phase at a relatively low temperature leads to formation of semi-insulating polycrystalline silicon film containing nanocrystals with the grain size of 20-40 nm. At the same time, films oxygen doping result in formation of silicon nanocrystals arrays with the mean particle size less than 10 nm. Possibility of size-controlled Si nanocrystals formation followed by electronic structure reconstruction of amorphous films with nanocrystalline inclusions is discussed and can be found prospective for a range of possible applications.