Electrical properties study of double porous silicon layers: Conduction mechanisms

摘要

The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investigated by current-voltage (Ⅰ-Ⅴ) and admittance spectroscopy measurements. From Ⅰ-Ⅴ characteristics and the band diagram of the structure, it was concluded that tunneling current is prevailing at low forward polarization. The temperature dependence of the conductance shows the existence of a hopping conduction in the PS layer.