机译:HiPIMS沉积的FINEMET型薄膜:生长和退火条件对磁性能的影响
Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi, Romania;
Faculty of Materials Science and Engineering, Warsaw University of Technology, 05-507 Warszawa, Poland;
Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi, Romania,Alexandru loan Cuza University, Faculty of Physics, Physics Department, Blvd. Carol, No. 11 A, R-700506 Iasi, Romania;
Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi, Romania;
National Institute of Research & Development for Technical Physics, 700050 Iasi, Romania;
Faculty of Materials Science and Engineering, Warsaw University of Technology, 05-507 Warszawa, Poland;
Amorphous; Coercive magnetic field; Nanocrystallization; Sputtering; Thin films;
机译:退火对Finemet型合金薄膜的表面形貌和磁性的影响
机译:沉积和快速热退火的Pr-Fe薄膜的磁行为
机译:注入MOCVD沉积SrCu_2O_2(SCO)薄膜的生长及退火条件的研究
机译:退火对细胞型合金薄膜表面形貌和磁性的影响
机译:氢在PECVD沉积的氮化硅薄膜中的重新分布。
机译:基材工艺条件和生长ZnO薄膜性能的底蛋白温度通过连续的离子层吸附和反应方法
机译:通过HIPIMS / DC-磁控管混合溅射从TiB2和Si靶共溅射沉积非晶Ti-B-Si-N薄膜的生长和性能