Enhanced ferroelectric properties of Pb(Zr_(0.80)Ti_(0.20))O_3/PbO thin films prepared by radio frequency magnetron sputtering

摘要

The Pb(Zr_(0.80)Ti_(0.20))O_3 (PZT) thin films with and without a PbO buffer layer were deposited on the Pt(l1 l)/Ti/SiO_2/Si(l00) substrates by radio frequency (rf) magnetron sputtering method. The PbO buffer layer improves the microstructure and electrical properties of the PZT thin films. High phase purity and good microstructure of the PZT thin films with a PbO buffer layer were obtained. The effect of the PbO buffer layer on the ferroelectric properties of the PZT thin films was also investigated. The PZT thin films with a PbO buffer layer possess better ferroelectric properties with higher remnant polarization (P_r = 25.6 μC/cm~2), and lower coercive field (E_c = 60.5 kV/cm) than that of the films without a PbO buffer layer (P_r = 9.4 μC/cm~2, E_c = 101.3 kV/cm). Enhanced ferroelectric properties of the PZT thin films with a PbO buffer layer is attributed to high phase purity and good microstructure.