The present invention relates to a method for manufacturing a kobelite thin film using radio frequency magnetron sputtering and to a thin film solar cell using the kobelite thin film manufactured by the method, and more particularly, to a hexagonal system using a high frequency magnetron sputtering method. ) to prepare a CuS (copper sulfide) thin film having a crystal structure and (110) plane preferential growth orientation, and using this, significantly improved open-circuit voltage (Voc) and short circuit current density (Jsc) ), a fill factor (FF) and a power conversion efficiency (PCE).
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