机译:溅射金属前驱体结合快速热退火硫化工艺制备Cu2FeSnS4薄膜的合成,结构,光学和电学性质
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;
Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China;
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China;
Cu2FeSnS4; Sputtering; Solar cell; Sulfurization;
机译:金属前驱物硫化制得的Cu2FeSnS4薄膜的结构,形貌和电性能的升温速率调节
机译:快速热法对Cu(In,Ga)Se_2薄膜太阳能电池直流溅射金属前驱物的硒化退火效应
机译:溅射在硅(111)衬底上的二氧化铈薄膜的快速热退火:加热速率对微结构和电性能的影响
机译:快速热退火对RF溅射CCTO薄膜结构和电性能的影响
机译:原位热退火工艺对脉冲激光沉积制造CDS Cdte薄膜太阳能电池结构,光学和电性能的影响
机译:通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
机译:UV辐射和快速热退火过程引入溶胶 - 凝胶法衍生铁电Sr0.9bi2.1tA1.8NB0.2O9薄膜的结晶和电介质/电学性能
机译:快速热退火处理的假晶alGaas / InGaas / Gaas调制掺杂结构的光学和电学表征