Fabrication of O-N Structure Thin Films by Rapid Thermal Annealing Process

摘要

A fabrication method of dielectric layer of O(oxide)-N(nitride) structure in interpoly capacitor through simple process is disclosed. The method comprises the steps of: (a) forming an oxide layer(O) by RTP(rapid thermal process) being a polysilicon stack electrode maintained firstly in N2 gas atmosphere at 800deg.C for 20 seconds and then in mixing gas atmosphere of O2 and HCl at 1100deg.C; and (b) forming a nitride layer(N) by RTP being the oxide layer maintained for 10 seconds in N2 gas at 800deg.C and then maintained for 20 seconds in NH3 gas at 1100deg.C. The O-N dielectric films are directly formed on polysilicon by using RTP, thereby easily controlling the thickness of the dielectric films and decreasing the process time.