Synthesis of tetrataenite thin films via rapid thermal annealing

摘要

A method for synthesis of high anisotropy L1₀ FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1₀-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1₀ FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO₂ seed layer to mechanically strain the sample during rapid thermal annealing.