SYNTHESIS OF TETRATAENITE THIN FILMS VIA RAPID THERMAL ANNEALING

摘要

A method for synthesis of high anisotropy L1₀#191 FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1₀#191-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1₀#191 FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO₂#191 seed layer to mechanically strain the sample during rapid thermal annealing.