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Chemical spray deposition technique of antimony (Sb) doped polycrystalline MnIn2S4 thin films: Preparation and characterization

机译:锑掺杂多晶MnIn2S4薄膜的化学喷雾沉积技术:制备与表征

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The Sb-doped Manganese Indium Sulphide (MnIn2S4) films were deposited on glass substrates using spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 degrees C with a constant spray time (5 mins). The structural, morphological, optical and electrical properties of the thin films were investigated through different techniques such as X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Electron diffraction spectroscopy (EDS), and UV-vis spectroscopy. The XRD studies reveal that the Sb-doped MnIn2S4 films were polycrystalline in nature with a cubic spinal structure having (220) plane as the preferred orientation. The EDS spectrum predicts the presence of Mn, In, Sb and S in the film grown at a substrate temperature of 250 degrees C. The FESEM photographs indicate the modification in the surface morphology of the films with an increase of substrate temperatures. From the optical studies, it is noted that, the band gap energy increases (1.852.75 eV) with an increase of substrate temperature (250-400 degrees C). These results reveal that the Sbdoped MnIn2S4 thin film prepared by spray pyrolysis technique is a promising candidate for photovoltaic applications. (C) 2017 Elsevier B. V. All rights reserved.
机译:使用喷雾热解技术将掺Sb的硫化锰铟(MnIn2S4)薄膜沉积在玻璃基板上。薄膜在250至400摄氏度的各种基材温度下以恒定的喷涂时间(5分钟)生长。通过不同的技术,例如X射线衍射(XRD),场发射扫描电子显微镜(FE-SEM),电子衍射光谱(EDS)和紫外可见光谱,研究了薄膜的结构,形态,光学和电学性质。光谱学。 X射线衍射研究表明,掺Sb的MnIn2S4薄膜本质上是多晶的,具有(220)平面为优选取向的立方脊柱结构。 EDS光谱预测在基板温度为250℃下生长的膜中存在Mn,In,Sb和S。FESEM照片表明,随着基板温度的升高,膜的表面形态发生了改变。从光学研究中注意到,带隙能量随着衬底温度(250-400℃)的增加而增加(1.852.75eV)。这些结果表明,通过喷雾热解技术制备的掺Sb的MnIn2S4薄膜是光伏应用的有希望的候选者。 (C)2017 Elsevier B.V.保留所有权利。

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