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Deposition and Characterization of Chromium Doped Tin Oxide Transparent Conducting Thin Films Prepared by Spray Pyrolysis Technique

机译:喷雾热解法制备铬掺杂氧化锡透明导电薄膜的沉积与表征

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Emergenceof innovative technological deposition technique of spray pyrolysis enabled the enhancement of structural,optical,and electrical properties of Sn1-xCrxO2 (x=0.0,0.02,0.04,0.06,0.10,0.15) transparent semiconductors thin films in the present study.To evaluate these properties,X-Ray diffraction (XRD) spectroscopy were usedto study the elemental component and the crystalline nature of the materials while the optical properties and structure of the samples were evaluated using UV—vis spectroscopy and field emission scanning electron microscopy (FESEM).Finding showed that the Cr-doped SnO2 films were tetragonal in shape.Transmission spectra of the deposited films showed high transparency of~ 70-90% in visible region with optical edge of 3.7eVfor SnO2.Resistivity of pure tin oxide samples was 0.01 Ω-Cm and increases with increase in dopant level.The Hall voltage showed that the type of semiconductor changed with increasing of dopant.
机译:喷雾热解创新技术沉积技术的出现使本研究中的Sn1-xCrxO2(x = 0.0,0.02,0.04,0.06,0.10,0.15)透明半导体薄膜的结构,光学和电学性能得以增强。特性,X射线衍射(XRD)光谱用于研究材料的元素成分和晶体性质,同时使用紫外可见光谱和场发射扫描电子显微镜(FESEM)评估样品的光学性质和结构。结果表明,Cr掺杂的SnO2薄膜呈四边形。沉积的薄膜的透射光谱在可见光范围内具有约70-90%的透明度,SnO2的光学边缘为3.7eV。纯锡氧化物样品的电阻率为0.01Ω-Cm。霍尔电压表明半导体的类型随掺杂剂的增加而变化。

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