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Deposition and Characterization of Chromium Doped Tin Oxide Transparent Conducting Thin Films Prepared by Spray Pyrolysis Technique

机译:喷雾热解技术沉积和表征铬掺杂氧化锡透明导电薄膜

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Emergenceof innovative technological deposition technique of spray pyrolysis enabled the enhancement of structural,optical,and electrical properties of Sn1-xCrxO2 (x=0.0,0.02,0.04,0.06,0.10,0.15) transparent semiconductors thin films in the present study.To evaluate these properties,X-Ray diffraction (XRD) spectroscopy were usedto study the elemental component and the crystalline nature of the materials while the optical properties and structure of the samples were evaluated using UV—vis spectroscopy and field emission scanning electron microscopy (FESEM).Finding showed that the Cr-doped SnO2 films were tetragonal in shape.Transmission spectra of the deposited films showed high transparency of~ 70-90% in visible region with optical edge of 3.7eVfor SnO2.Resistivity of pure tin oxide samples was 0.01 Ω-Cm and increases with increase in dopant level.The Hall voltage showed that the type of semiconductor changed with increasing of dopant.
机译:喷雾热解的创新技术沉积技术的出现使得SN1-XCRXO2的结构,光学和电性能的增强(x = 0.0.0.0.0.04,0.06,0.0.0.0.0.0.0.05)透明半导体薄膜在本研究中进行评估使用UV-VIS光谱和场发射扫描电子显微镜(FeSEM)评估材料的基本组分和材料的结晶性能和材料的基本组分和晶体性质的性质。表明,Cr掺杂的SnO2膜在形状中是四边形的。沉积膜的转展光谱显示出高〜70-90%的可见区域,光边3.7ev至SnO2的光边。纯氧化锡样品的效率为0.01Ω-cm并随着掺杂剂水平的增加而增加。霍尔电压显示,半导体类型随着掺杂剂的增加而改变。

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