Effect of copper doping on the crystallization behavior of TiSbTe for fast-speed phase change memory

摘要

In this study, Ti-Sb-Te (TST) alloy doped with Cu has been proposed to enhance the phase change and electrical properties of TST. The formation of Cu-Te bond was suggest to be responsible for the improved thermal stability of the Cu-0.28(Ti0.09Sb0.38Te0.53)(0.72) (Cu0.28TST) film. Cu0.28TST-based phase change memory cell can be triggered by a 5 ns electric pulse. Such fast speed was ascribed to its growth-dominated crystallization mechanism and the precipitation of Sb in the crystallization process. Furthermore, an endurance cycles up to 10(5) could be achieved in the memory cell. (C) 2019 Elsevier B.V. All rights reserved.