机译:碳化硅掺杂的Sb2Te3纳米材料用于快速相变存储器
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China|Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100080, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China|Univ Chinese Acad Sci, Beijing 100080, Peoples R China;
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China|Univ Chinese Acad Sci, Beijing 100080, Peoples R China;
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China;
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China;
Nano-composite; Thin film; Rapid transition; Large reflectivity ratio;
机译:铜掺杂对快速相变存储器TiSbTe结晶行为的影响
机译:Y掺杂的SB2TE3相变材料:朝向普遍存存
机译:掺钇的Sb2Te3:相变存储器的有前途的材料
机译:通过X射线衍射和相变存储器电阻测量的N掺杂SB2Te3膜的特性
机译:相变存储器和碳纳米材料的纳米级温度测量。
机译:dium掺杂为相变随机存取存储器应用带来了Sb2Te合金速度的改善
机译:(GeTe)l(Sb2Te3)m界面相变存储材料的相干声子研究