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Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory material
Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory material
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机译:Sb-Te-Ti相变存储材料和Ti-Sb2Te3相变存储材料
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摘要
An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100−x−y, where 0x80 and 0y100−x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.
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机译:适用于相变存储器的Sb-Te-Ti相变薄膜材料及其制备。通过用Ti掺杂Sb-Te相变存储材料来形成Sb-Te-Ti相变存储材料,Ti与Sb和Te形成键,并且Sb-Te-Ti相变存储材料具有化学成分。公式Sb x Sub> Te y Sub> Ti 100-x−y Sub>,其中0 2 Sub> Te 3 Sub>相变存储材料时,Ti原子代替Sb原子,并且相分离确实不会发生。 Sb-Te-Ti相变存储材料的结晶温度显着升高,保持力提高,热稳定性提高。同时,非晶态电阻降低,结晶态电阻增加。 Sb-Te-Ti相变存储材料在相变存储器中具有广泛的应用。
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