Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb_2Te Thin Films for Phase-Change Random Access Memory

摘要

The Ge doped Sb_2Te thin films (Ge2Sb_2Te_5, Ge_(0.15)Sb_2Te and Ge0.61Sb_2Te) were deposited by magnetron co-sputtering using Ge and Sb_2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge_(0.61)Sb_2Te thin films have higher crystallization temperature (～200°C), larger crystallization activation energy (～3.28 eV), better data retention(～120.8°Cfor 10 years) and lower thermal conductivity (～0.23 W/mK). Ge_(0.61)Sb_2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.