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Phase-change material Ge_(0.61)Sb_2Te for application in high-speed phase change random access memory

机译：相变材料Ge_（0.61）Sb_2Te在高速相变随机存取存储器中的应用

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摘要

Compared with Ge_2Sb_2Te_5, Ge_(0.61)Sb_2Te has higher crystallization temperature (～200.5 ℃), larger crystallization activation energy (～3.28eV), and better data retention (～120.8 ℃ for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge_(0.61)Sb_2Te material is a promising candidate for the trade-off between programming speed and data retention.
机译：与Ge_2Sb_2Te_5相比，Ge_（0.61）Sb_2Te具有更高的结晶温度（〜200.5℃），更大的结晶活化能（〜3.28eV）和更好的数据保持力（10年〜120.8℃）。短至10 ns的电脉冲可以触发非晶态和结晶态之间的切换。电阻比为两个数量级时，耐久测试可达106个循环。 Ge_（0.61）Sb_2Te材料是编程速度和数据保留之间权衡的有希望的候选者。

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  • 来源
    《Applied Physics Letters》 |2013年第10期|103110.1-103110.4|共4页
  • 作者

    Yifeng Gu; Sannian Song; Zhitang Song; Suyuan Bai; Yan Cheng; Zhonghua Zhang; Bo Liu; Songlin Feng;

  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, ShanghaiInstitute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China;

    School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China;

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China;

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