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Preparation and optical properties of epitaxial Pb(Mg_(1/3)Nb_(2/3))O_3 - PbTiO_3 thin film on Si substrates with buffer layer using pulsed laser deposition

机译:脉冲激光沉积在带有缓冲层的Si衬底上外延Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3薄膜的制备及光学性质

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摘要

Epitaxial Pb(Mg_(1/3)Nt_(2/3))O_3-PbTiO_3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO_3/SrTiO_3/(La,Sr)CoO_3/CeO_2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.
机译:使用缓冲层在Si衬底上制造用于电光应用的外延Pb(Mg_(1/3)Nt_(2/3))O_3-PbTiO_3(PMN-PT)薄膜。通过脉冲激光沉积制备了PMN-PT / SrRuO_3 / SrTiO_3 /(La,Sr)CoO_3 / CeO_2 / YSZ / Si异质结构,成功沉积了厚度为2μm的PMN-PT薄膜。通过棱镜耦合法测量了PMN-PT外延膜的光学特性。通过在沉积过程中在靶材和基板之间引入掩膜,可大大改善PMN-PT膜的形貌。 PMN-PT薄膜显示出柱状结构,其中每列的宽度约为180nm。使用棱镜耦合器方法,对于外延PMN-PT薄膜,获得零偏压的2.48的折射率。

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