Electrical Properties of Epitaxial 0.65Pb (Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition

摘要

Thin films of 0.65Pb (Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3(PMN-PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°-650℃ in oxygen ambient of 300 mTorr. The La_(0.5)Sr_(0.5)CoO_(3-δ) (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ-cm were epitaxially grown on CeO_2/YSZ-bufFered Si (001) substrates. The high-resolution X-ray diffraction and transmission electron microscopy results show that the PMN-PT films grown on LSCO/CeO_2/YSZ/Si substrates at 550℃ exhibit the epitaxial perovskite structure. The PMN-PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good P-E (polarization-electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm and a coercive field of 33.5 kV/cm was obtained on the PMN-PT films.