机译:脉冲激光沉积外延0.7Pb(Mg_(1/3)Nb_(2/3))O_3- 0.3PbTiO_3薄膜的生长和电学性质
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
Key Laboratory of Resource Chemistry of Education Ministry, Department of Chemistry, Shanghai Normal University;
Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics;
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University;
机译:脉冲激光沉积在缓冲硅衬底上生长的外延0.65Pb(Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3薄膜的电性能
机译:脉冲激光沉积La_(0.6)Sr_(0.4)CoO_3缓冲的0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3薄膜的铁电和介电性能
机译:脉冲激光沉积在带有缓冲层的Si衬底上外延Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3薄膜的制备及光学性质
机译:模板层对脉冲激光烧蚀PB介电和电性能的影响(Mg_(1/3)Nb_(2/3))O_3-PBTIO_3薄膜
机译:通过正交交叉束脉冲激光沉积在硅上外延取向氮化钛薄膜的生长和表征。
机译:脉冲激光沉积沉积的Nb掺杂SrsnO3外延膜的电气和光学性能
机译:脉冲激光沉积生长CR-N编排TiO2外延薄膜的电性能测量