Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3 thin films

摘要

0.65Pb(Mg~(1/3)Nb~(2/3))O~(3)–0.35PbTiO~(3)(PMN–PT) thin films were deposited on (111)Pt/Ti/SiO~(2)/Si substrates via the chemical solution deposition. Both of the annealing process and additive methanamide play an obvious part in the structure and electrical properties of PMN–PT films. The optimized high-qualitied PMN–PT thin film in present work is fabricated with the methanamide in the precursor and annealed at 650 °C for 20 min. The film exhibits pure perovskite phase and superior ferroelectricity. The saturation polarization P ~( s )and remanent polarization P ~( r )are 52.1 µC/cm_(2)and 18.7 µC/cm_(2)at 500 kV/cm with 1000 Hz. It also shows low leakage current density of approximately 1.0 × 10_(− 8) A/cm_(2)at 200 kV/cm.