Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 Relaxor Thin Films

摘要

Relaxor ferroelectrics Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (PMN-PT) have attracted considerable attention because of their excellent electrical properties, such as high dielectricity and piezoelectricity, for application to super capacitors, piezoelectric actuators, and so on. It is well known that the electrical properties of ferroelectric thin films depend on several parameters, such as crystal orientation, composition, and residual stress. In this study, the effects of the lead titanate and lanthanum nickel oxide seeding layers on the film orientation, electrical properties, and low-temperature crystallization behavior were investigated for Chemical Solution Deposition (CSD)-derived PMN-PT thin films. As a result, PMN-PT thin films with (001)_c- and (111)_c-preferred orientations were successfully obtained by designing the seeding layers. Both thin films exhibited very good ferroelectricity because of their good crystallinity and preferred orientation.