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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Growth and characterization of Zn_xCd_(1-x)Se/Zn_(x') Cd_(y') Mg_(1-x'-y') Se asymmetric coupled quantum well structures for quantum cascade laser applications
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Growth and characterization of Zn_xCd_(1-x)Se/Zn_(x') Cd_(y') Mg_(1-x'-y') Se asymmetric coupled quantum well structures for quantum cascade laser applications

机译:Zn_xCd_(1-x)Se / Zn_(x')Cd_(y')Mg_(1-x'-y')Se非对称耦合量子阱结构的生长和表征

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摘要

The authors report the growth of a Ⅱ-Ⅵ Zn_xCd_(1-x)Se/Zn_(x')Cd_(y')Mg_(1-x'-y')/Se asymmetric coupled quantum well (asymmetric-CQW) structure that was used to investigate the active region of an intersubband electroluminescence structure designed for emission at λ = 4.5 μm. Such a structure could comprise the active region of a quantum cascade laser. The results of photoluminescence and Fourier transform infrared spectroscopy analysis show good agreement with the expected transition energies predicted by simulation results for the asymmetric-CQW structure. High resolution x-ray diffraction analysis indicates high structural quality of the sample and good control of the growth.
机译:作者报告了Ⅱ-ⅥZn_xCd_(1-x)Se / Zn_(x')Cd_(y')Mg_(1-x'-y')/ Se的生长非对称耦合量子阱(asymmetric-CQW)结构用来研究设计用于λ= 4.5μm发射的子带间电致发光结构的有源区。这种结构可以包括量子级联激光器的有源区。光致发光和傅立叶变换红外光谱分析的结果与非对称CQW结构的模拟结果预测的预期跃迁能量显示出良好的一致性。高分辨率x射线衍射分析表明样品的高结构质量和良好的生长控制。

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