Quantum cascade laser element, quantum cascade laser device, and manufacturing method of quantum cascade laser device

摘要

Issue 7.5 μ Problem to be solved: to provide a method of manufacturing a quantum cascade laser element, a quantum cascade laser apparatus, and a quantum cascade laser apparatus having an antireflection film effectively functioning against laser light having a central wavelength of more than m.The quantum cascade laser device 1 comprises a semiconductor substrate 2, a semiconductor laminate 3 having a first end surface 3a and a second end surface 3b, a first electrode 5, a second electrode 6, and an antireflection film 7 formed on the first end surface 3a.Semiconductor laminate 3 7.5 μ A laser beam having a central wavelength of more than m is oscillated.The antireflection film 7 is formed on the first refractive index film on the opposite side to the first end surface 3a with respect to the insulating film which is the CeO2 film formed on the first end surface 3a and the first refractive index film which is the yf3 film or CEF. Sub.3 film disposed on the opposite side to the first end surface 3a with respect to the insulating film, and the first index film 3a. A second index film having a refractive index greater than 1.8 is included.Diagram