机译:通过高纵横比抗蚀剂掩模通过氧化物的离子束辐照来制造金属纳米线
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Russian Research Centre "Kurchatov Institute," Kurchatov Square, Moscow, 123182, Russia;
Canadian Photonics Fabrication Centre, Institute for Microstructural Sciences, National Research Council of Canada, 1200 Montreal Rd., Bldg. M-50, Ottawa K1A 0R6, Ontario, Canada;
机译:利用ICP干法刻蚀转移全息抗蚀剂掩模制造高纵横比的熔融石英亚微米光栅
机译:通过使用SF_6:C_4F_8进行干法刻蚀并在Si基板上进行自限热氧化来制造高纵横比的纳米线
机译:通过使用SF6:C4F8进行干法刻蚀并在Si基板上进行自限热氧化来制造高纵横比的纳米线
机译:用于下一代光刻面膜制造的金属表面上的先进的负I-LINE抗蚀剂
机译:基于金属氧化物纳米线的无抗蚀剂制造协议的开发和微器件的性能表征
机译:形态学杨氏模量和高纵横比钨纳米线的电阻率
机译:桥接氧化物纳米线器件使用单步金属催化剂免热蒸发制备
机译:用V2O5纳米线掩模和离子束铣削制备窄金纳米团簇线