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Method of structuring with metal oxide masks by reactive ion-beam etching
Method of structuring with metal oxide masks by reactive ion-beam etching
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机译:通过反应离子束刻蚀用金属氧化物掩膜进行结构化的方法
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摘要
Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion- beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.
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