Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition

摘要

The development of low dielectric constant (low-k) mate- rials has become one of the most important key challenges for use as interlayer dielectrics (ILDs) of the high perfor- mance ultralarge-scale-integration (ULSI) devices. As the decreased design rule and increased complexity of ULSI cir- cuits have essentially increased the crosstalk and RC time delay caused by parasitic capacitance, a great deal of effort has been spent in reducing the dielectric constant of the in- terlayer as well as reducing the resistance of the wiring metals.