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Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process

机译：等离子体增强化学气相沉积和溶剂法合成碳氟化合物多孔膜的孔隙率和介电常数

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Takahashi Kazuo; Mitamura Takashi; Ono Kouichi; Setsuhara Yuichi; Itoh Atsushi; Tachibana Kunihide;
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年度 2003
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1. Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C_4F_8 and Si_2H_6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics [J] . Howoon KIM, Jang-Kyoo SHIN, Dae-Hyuk KWON, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第7A期

机译：C_4F_8和Si_2H_6 / He用于低介电常数金属间层电介质的氟化非晶碳薄膜的等离子体化学气相沉积生长
2. Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition [J] . Y.Y.Jin, Kihong kim, G.S.Lee Journal of Vacuum Science & Technology. B . 2001,第1期

机译：等离子体增强化学气相沉积法制备低介电常数含硅氟碳薄膜
3. Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition [J] . Chi Kyu Choi, Heang Seuk Lee, R. Navamathavan, Thin Solid Films . 2010,第22期

机译：等离子增强化学气相沉积法在低介电常数SiOC（-H）薄膜中Cu扩散行为的研究
4. Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition [C] . L.M. Zambov, B. Ivanov, C. Popov, European conference on chemical vapor deposition . 2001

机译：低压化学气相沉积合成低介电常数SiOCN膜的表征
5. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [D] . Jin, Yoonyoung. 2005

机译：通过等离子体增强的含硅的低介电常数碳氟化合物薄膜增强了化学气相沉积。
6. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation [O] . Kunsik An, Ho-Nyun Lee, Kwan Hyun Cho, 2020

机译：193 nm ArF受激准分子激光在激光辅助等离子体增强SiNx的化学气相沉积中的作用以进行低温薄膜封装
7. Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications [O] . Lau Kenneth Ka Shun 1972- 2000

机译：用于低介电常数薄膜应用的碳氟化合物薄膜的化学气相沉积

Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process

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