Nanoscale structure fabrication of multiple AIGaSb/lnGaSb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals

摘要

The authors studied nanoscale structure fabrication of multiple AlGaSb/InGaSb quantum wells. The fabrication was successfully conducted using simple resist masks for electron beam lithography and reactive ion etching (RIE) with chlorine-based gases. The etching profile after the RIE showed good vertical shape. Etching damage induced by the RIE was revealed by using photoluminescence measurements. The effects of surface recombination at the etching sidewalls were large, but the effects were suppressed by using HCl and (NH_4)_2S_x treatments. The damage was low enough to create small active optical devices, such as photonic crystals, comparably with current InGaAsP systems.