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Fabrication of two-dimensional infrared photonic crystals by deep reactive ion etching on Si wafers and their optical properties

机译:硅晶片上深反应离子刻蚀制备二维红外光子晶体及其光学性能

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摘要

We report the fabrication and characterization of two-dimensional silicon-based photonic crystal structures realized by deep reactive ion etching. Photonic crystals with square and triangular lattices with very high aspect ratios up to 33 have been achieved. Photonic bandgap behaviors are identified by the transmission and reflection spectra measured by using a Fourier transform infrared spectrometer. The experimental results are in good agreement with the calculated band structures. (C) 2004 Elsevier Ltd. All rights reserved.
机译:我们报告了通过深反应离子刻蚀实现的二维硅基光子晶体结构的制造和表征。已经实现了具有非常高的长宽比高达33的正方形和三角形晶格的光子晶体。通过使用傅立叶变换红外光谱仪测量的透射和反射光谱来识别光子带隙行为。实验结果与计算的能带结构吻合良好。 (C)2004 Elsevier Ltd.保留所有权利。

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