Comparison of a new photoresist (DiaPlate 133) with SU-8 using both x-ray and ion beam lithographies

摘要

We describe essentially the lithography performed on a new photoresist, called DiaPlate 133. This negative resin has been structured by an x-ray beam produced by a new high brightness synchrotron light source, the Swiss Light Source (SLS) located at Villigen, near Zurich, during a 8 h-run and compared with another well-known resin, SU-8. Then the resins have been structured with ions at CAM and both techniques are compared. Results and comments are presented underneath. It can be noted that the x-ray and ion beam lithography tests we performed with DiaPlate 133 were the first ones ever realized. (C) 2004 American Vacuum Society.