首页> 外国专利> SALT WHICH IS SUITABLE AS AN ACID GENERATOR, A PHOTORESIST COMPOSITION SUITABLE FOR AN ARF EXCIMER LASER LITHOGRAPHY, KRF EXCIMER LASER LITHOGRAPHY, EUV, EMULSION LITHOGRAPHY, AND ELECTRON BEAM LITHOGRAPHY, AND A MANUFACTURING METHOD OF PHOTORESIST PATTERNS

SALT WHICH IS SUITABLE AS AN ACID GENERATOR, A PHOTORESIST COMPOSITION SUITABLE FOR AN ARF EXCIMER LASER LITHOGRAPHY, KRF EXCIMER LASER LITHOGRAPHY, EUV, EMULSION LITHOGRAPHY, AND ELECTRON BEAM LITHOGRAPHY, AND A MANUFACTURING METHOD OF PHOTORESIST PATTERNS

机译:适于作为酸产生剂的盐,适用于ARF准分子激光光刻,KRF准分子激光光刻,EUV,乳化光刻和电子束光刻的光致抗蚀剂组合物,以及光致抗蚀剂的制造方法

摘要

PURPOSE: A salt is provided to be suitable as an acid generator and to provide a photoresist composition capable of forming photoresist patterns having a low line edge roughness.;CONSTITUTION: A salt is represented by chemical formula 1. In chemical formula 1, Q^1 and Q^2 is respectively fluorine or C1-C6 perfluoroalkyl group, n is 0 or 1, L^1 is a single bond or C1-10 alkanediyl group, where the methylene group can be replaced by an oxygen or carbonyl group, but n is 0 then L^1 is not a single bond, ring W is a C3-36 aliphatic ring, where the methylene group can be replaced by oxygen, sulfur, a carbonyl group or a sulfonyl group. The hydrogen can be replaced by a hydroxy group, a C1-12 alkyl group, or a C1-12 alkoxy group. R^1 is a hydroxyl group, or a hydroxy group protected with a protective group, and Z^+ is an organic cation.;COPYRIGHT KIPO 2013
机译:用途:提供一种盐以适合作为酸产生剂并提供能够形成具有低线边缘粗糙度的光刻胶图案的光刻胶组合物。;组成:一种盐用化学式1表示。在化学式1中,Q ^ 1和Q ^ 2分别是氟或C1-C6全氟烷基,n是0或1,L ^ 1是单键或C1-10烷二基,其中亚甲基可以被氧或羰基取代,但是n为0,则L ^ 1不是单键,环W为C3-36脂族环,其中亚甲基可被氧,硫,羰基或磺酰基取代。氢可以被羟基,C 1-12烷基或C 1-12烷氧基取代。 R ^ 1是羟基或被保护基保护的羟基,Z ^ +是有机阳离子。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20120116869A

    专利类型

  • 公开/公告日2012-10-23

    原文格式PDF

  • 申请/专利权人 SUMITOMO CHEMICAL CO. LTD.;

    申请/专利号KR20120037529

  • 发明设计人 ANRYU YUKAKO;ICHIKAWA KOJI;

    申请日2012-04-10

  • 分类号C07C309/27;G03F7/004;C07C57/28;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:54

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