Fabrication of freestanding LiNbO3 thin films via He implantation and femtosecond laser ablation

摘要

The authors report using a combination of ion-implantation exfoliation and femtosecond laser ablation to fabricate thin (micrometers-thick) single-crystal films of a complex oxide, LiNbO3. The process physics for the method is bounded by the threshold for ablation and the onset of laser thermal outdiffusion of the implanted He used in exfoliation selective etching.