机译:MOVPE在更安全的生长条件下生长的InAs / GaAs量子点的研究
Photonics Research Center School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
Photonics Research Center School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
Clean Room School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
Photonics Research Center School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
Photonics Research Center School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
Clean Room School of Electrical ampamp Electronic Engineering Nanyang Technological University Singapore 639798 Singapore;
quantum dots; MOVPE; TBA/N2; two-step; transition energy; epitaxy;
机译:MOVPE在更安全的生长条件下生长的InAs / GaAs量子点的研究
机译:热处理对LP-MOVPE生长的InAs / GaAs量子点生长的1.3μm发射量子点(QD)光学和结构性质的影响
机译:在MOVPE条件下通过液滴外延在InAs / GaAs系统中生长量子点阵列的可能性
机译:LP-MOVPE生长的1.3 In / splμm/ m发射InAs / GaAs量子点的光学和结构性质与再生长温度的函数
机译:用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
机译:硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
机译:MOVPE生长的InAs / GaAs量子点的生长参数
机译:mOVpE在In0.53Ga0.7as矩阵中生长Inas自组织量子点。