Growth parameters of InAs/GaAs quantum dots grown by MOVPE

摘要

Quantum dots are zero dimensional structures and therefore have superior transport and opticaludproperties compared to either 2-dimensional or 3-dimensional structures. Quantum dots showudpromise for use in diode lasers, amplifiers, and biological sensors. They are also vigorouslyudresearched for use in solid-state quantum computing. Indium arsenide quantum dots areudcurrently studied for their use in the photoelectronic and semiconductor fields. In our research,udIndium Arsenide (InAs) quantum dots are grown on Gallium Arsenide (GaAs) substrate usingudMetal Organic Vapor Phase Epitaxy (MOVPE) in the Stranski-Krastanov Growth mode.udSeveral parameters influence the growth of InAs quantum dots greatly. We will be describingudthese growth parameters, which we have identified in our current growth attempts. We areudcurrently trying to achieve device quality InAs/GaAs quantum dots by varying theseudparameters we have identified. These growth parameters include the V/III ratio of both InAsudand GaAs, In/As growth temperature, and quantum dot growth time. By carefully fine tuningudthe parameters above, we will be able to grow device quality quantum dots. Deviations fromudthe optimized value will result in either no formation of quantum dots, or the formation ofudlarge islands which are particularly susceptible to dislocations. The effects of differing growthudparameters are observed by using an Atomic Force Microscope (AFM) located at Faculty ofudScience, UTM. The MOVPE is located at Ibn Sina Institute for Fundamental Science Studies,udUTM.