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机译:使用EUV干涉光刻研究接触孔印刷的抗蚀剂性能
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
Paul Scherrer Institul, Laboratory for Micro and Nanotechnology, Villigen, Switzerland;
extreme ultraviolet; interference lithography; polarization; contact hole; chemically amplified resist;
机译:通过EUV光刻技术印刷50和80 nm接触孔的统计限制
机译:基于模型的抗蚀剂和掩模对EUV光刻中低于30 nm接触孔的局部CDU的影响
机译:使用DDR工艺制造高纵横比透射光栅,以通过EUV干涉光刻技术评估10 nm EUV抗蚀剂
机译:EUV抵抗EUV干扰光刻的接触孔印刷的进展
机译:无墨软光刻:利用固定化酶和小分子通过催化微接触印刷对自组装单分子膜进行构图
机译:高敏感性抗蚀性对EUV光刻进行抗衡性:材料设计策略和绩效结果综述
机译:高敏感性抗蚀性,对EUV光刻进行抗衡性:材料设计策略和绩效结果综述