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High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

机译：高敏感性抗蚀性，对EUV光刻进行抗衡性：材料设计策略和绩效结果综述

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Theodore Manouras; Panagiotis Argitis;
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1. High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results [J] . Theodore Manouras, Panagiotis Argitis Nanomaterials . 2020,第8期

机译：高敏感性抗蚀性，对EUV光刻进行抗衡性：材料设计策略和绩效结果综述
2. Resist Materials Design to Improve Resolution and Sensitivity in EUV Lithography [J] . Hideaki Tsubaki, Tooru Tsuchihashi, Tomotaka Tsuchimura Journal of Photopolymer Science and Technology . 2009,第1期

机译：抵抗材料设计以提高EUV光刻的分辨率和灵敏度
3. Design and performance of EUV resist containing photoacid generator for sub-100 nm lithography [J] . Thiyagarajan M, Gonsalves KE, Dean K, Journal of nanoscience and nanotechnology . 2005,第7期

机译：用于亚100 nm光刻的含EUV光刻胶的光酸产生剂的设计和性能
4. Resist materials design to improve sensitivity in EUV lithography [C] . Hideaki Tsubaki, Tooru Tsuchihashi, Katsuhiro Yamashita, Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) . 2009

机译：抵抗材料设计以提高EUV光刻的灵敏度
5. The design, synthesis, and evaluation of novel dendritic polymers as resist materials for next generation lithography. [D] . Tully, David Charles. 2001

机译：新型树枝状聚合物作为下一代光刻的抗蚀剂材料的设计，合成和评估。
6. High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results [O] . Theodore Manouras, Panagiotis Argitis 2020

机译：高敏感性抗蚀性对EUV光刻进行抗衡性：材料设计策略和绩效结果综述
7. A Resist Material Study for LWR and Resolution Improvement in EUV Lithography [O] . Katsuhiro Yamashita, Sou Kamimura, Hidenori Takahashi, 2008

机译：EUV光刻中LWR和分辨率改进的抗拒材料研究

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

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