Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

摘要

The III-V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have, for some time now, been recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within these III-V nitride semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving field, in this paper we review analyses of the electron transport within the III-V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride. In particular, we discuss the evolution of the field, compare and contrast results determined by different researchers, and survey the current literature. In order to narrow the scope of this review, we will primarily focus on the electron transport within bulk wurtzite gallium nitride, aluminum nitride, and indium nitride, for this analysis. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art III-V nitride semiconductor orthodoxy. A brief tutorial on the Monte Carlo approach will also be featured. Steady-state and transient electron transport results are presented. We conclude our discussion by presenting some recent developments on the electron transport within these materials.