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Investigations of the GaN, AlN, and InN Semiconductors: Structural, Optical,Electronic and Interfacial Properties

机译：GaN，alN和InN半导体的研究：结构，光学，电子和界面特性

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Described in this thesis is an investigation of some fundamental physical

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Strite, S. C.;
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年度 1993
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总页数 120
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electronics; Optical properties; Interfaces; Structural properties; Nitrides; Aluminum; Indium; Gallium nitrides; Density; Optical equipment; Physical properties; Plasmas(Physics); Electromagnetic properties; Gallium arsenides; Thin films; Theses; Zinc su;

机译：电子学;光学特性;界面;结构特性;氮化物;铝;铟;氮化镓;密度;光学设备;物理特性;等离子体（物理学）;电磁特性;砷化镓;薄膜;论文;锌;

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专利

1. (BN)(1)/(InN)(1), (AlN)(1)/(InN)(1) and (GaN)(1)/(InN)(1) (001) superlattices: An opto-electronic and bonding properties [J] . Karaouzene L. I., Merad A. E., Ouahrani T., Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2018,第期

机译：（BN）（1）/（INN）（1），（ALN）（1）/（1）（1）和（GaN）（1）/（Inn）（1）（001）超晶格：光电和粘合性质
2. Electronic and optical properties of zincblende AlN, GaN and InN compounds under pressure [J] . Berrah S, Boukortt A, Abid H Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2007,第4期

机译：压力下闪锌矿型AlN，GaN和InN化合物的电子和光学性质
3. Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles [J] . Beiranvand Razieh, Valedbagi Shahoo Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2016,第3期

机译：先进半导体材料的电子和光学特性：从第一原理出发的BN，AlN和GaN纳米片
4. Structural, electronic and optical properties of AlN-based oxides on Si and GaN substrates [C] . Olowolafe, J.O., Rau, . 1998

机译：Si和GaN基底上基于AlN的氧化物的结构，电子和光学性质
5. Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties. [D] . Strite, Samuel Clagett, III. 1993

机译：氮化镓，氮化铝和氮化铟半导体的研究：结构，光学，电子和界面特性。
6. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers [O] . Guijuan Zhao, Lianshan Wang, Shaoyan Yang, -1

机译：使用双AlN缓冲层在m面蓝宝石上生长的半极性（11-22）GaN的各向异性结构和光学性质
7. First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds [O] . Al-Sardia Mowafaq Mohammad Kethyan 2013

机译：AlN，GaN，InN和BN化合物的结构，电子和光学性质的第一性原理研究

Investigations of the GaN, AlN, and InN Semiconductors: Structural, Optical,Electronic and Interfacial Properties

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