Polarization induced electron populations in III-V nitride semiconductors: Transport, growth, and device applications.

摘要

The III–V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering the polarization fields to induce mobile charge concentrations and the transport properties of such polarization induced electron populations. A technique of generating degenerate high mobility three-dimensional electron slabs by polarization doping is demonstrated experimentally, and exploited for a novel device structure. Transport analysis of such carriers have resulted in studies of dislocation scattering effects in reduced dimensions, scattering from coupling of polarization and alloy disorder, identification of the importance of alloy scattering, and measurement of several important parameters of the AlGaN material system.