Heteropitaxial growth of III-V compound semiconductors for optoelectronic devices

摘要

An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown ona Si substrate using metalorganic chemical vapour deposition(MOCVD). The VCSELD with a 23-pair of AlAs/Al0.1Ga0.9Asdistributed Bragg reflector on a Si substrate exhibited a thresholdcurrent of 223 mA under continuous-wave condition at 220 K.Electroluminescence observation showed that an opticaldegradation was caused by generation and growth of dark-linedefects. An MOCVD-grown InGaN/AlGaN double-heterostructure light-emitting diode on a sapphire substrateexhibited an optical output power of 0.17mW, an externalquantum efficiency of 0.2%, a peak emission wavelength at 440nm with a full width at half-maximum of 63 nm and a stableoperation up to 3000h under 30mA DC operation at 30℃. Ahigh current level of 281 mA/mm and a largetransconductance (gm)of 33mS/mm have been achievedfor a GaN metal semiconductor field-effecttransistor (MESFET) with a gate length of 2μm anda width of 200μm at 25℃. The GaN MESFET at 400℃showed degraded characteristics: a low gm of13.4mS/mm, a gate leakage and a poor pinch-off.