Solution-based metal induced crystallized polycrystalline silicon films and thin-film transistors

摘要

Dish-like and wadding-like domain polycrystalline silicon (poly-Si) film's were obtained with Solution-based Metal Induced Crystallization (S-MIC) of amorphous silicon (α-Si). The hall mobility of poly-Si was much higher in dish-like domain than in wadding-like domain. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si FTFs were 70-80 cm~2/Vs and 40-50 cm~2/Vs, respectively. P-type TFTs exhibited excellent reliability.