Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors

摘要

In this paper, the effect of active layer (AC) thickness on the device performance and hot carrier (HC) instability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) based on metal induced crystallization (MIC) is investigated. The thinner AC thickness of MIC poly-Si TFTs brings better device performance and HC instability, which may be respectively attributed to the better gate control to the active channel and different electric field distributions in the active channel and gate oxide.