Post-annealing of solution-based metal-induced laterally crystallized poly-Si with triple-frequency YAG laser

摘要

In this paper, the properties of nickel solution-based metal-induced lateral crystallized poly-Si (S-MILC) post-annealed by a triple frequency YAG solid-state laser have been investigated in detail. After the post-annealing treatment, the performance of S-MILC TFT improved because the field effect mobility increased from 110 cm~2/V.s to 200 cm~2/V.s, the sub-threshold slope (S) decreased from 0.75 V/dec to 0.29 V/dec and the threshold voltage (V_(th)) decreased from 3.2 V to 0.7 V.