Effects of high temperature post-annealing on the properties of solution-based metal-induced crystallized polycrystalline silicon films

摘要

Solution-based metal-induced crystallized (S-MIC) poly silicon (poly-Si) thin films with different domain sizes were post-annealed at 600, 700, 800, and 900 ℃ for 2 h each in this order. Such annealing has increased the Hall mobility of the boron doped (p-type) and phosphorous doped (n-type) S-MIC poly-Si films at a rate of ～0.03 cm~2/V s/℃ and > 0.07 cm~2/V s/℃, respectively. However, the carrier concentration in n-type S-MIC poly-Si decreased after each further post annealing treatment. We believe it is due to the residual nickels in poly-Si, which might induce additional dopant segregation besides the effect of grain boundaries. The performance of p-type S-MIC poly-Si TFT was greatly enhanced by post furnace annealing.